
GeneSiC Semiconductor Inc Profile last edited on: 7/28/2020
CAGE: 3XRB6
UEI: DV7NF6NE49J6
Business Identifier: research, development, consulting, and manufacturing of widebandgap semiconductor devices, specially for power and microwave applications, SiC devices with higher performance, and high volume SiC device products. Is this YOUR Company?
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Location Information
43670 Trade Center Place Suite 155
Dulles, VA 20166
Dulles, VA 20166
(703) 996-8200 |
contact@genesicsemi.com |
www.genesicsemi.com |
Location: Single
Congr. District: 10
County: Loudoun
Congr. District: 10
County: Loudoun
Public Profile
GeneSiC is focused on exploiting the superior semiconductor properties of Silicon Carbide (SiC) to build transistors, rectifiers and detectors for high temperature, rad-hard, ultra-high voltage, high power and sensor applications. The firms technology plays a key enabling role in conserving energy and efficient harvesting of renewable energy sources in a wide array of high power systems. The company is currently engaged in the research, development, consulting, and manufacturing of widebandgap semiconductor devices, specially for power and microwave applications, SiC devices with higher performance, and high volume SiC device products. GeneSiC technology has applications in: Aerospace and Defense, Alternative Energy, Automotive, Down Hole Oil Drilling, Medical Supplies, Motor Control, Power Supply, Transportation, Uninterruptible Power Supply, Welding
Extent of SBIR involvement
Synopsis: Awardee Business Condition
Employee Range
15-19Revenue Range
1.5M-2MVC funded?
NoPublic/Private
Privately HeldStock Info
----IP Holdings
N/AAwards Distribution by Agency
Most Recent SBIR Projects
Year | Phase | Agency | Total Amount | |
---|---|---|---|---|
2021 | 1 | DMEA | $167,497 | |
Project Title: 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry | ||||
2021 | 2 | Navy | $2,229,998 | |
Project Title: Stackable, high voltage Silicon Carbide based DSRDs | ||||
2020 | 2 | DOE | $1,355,170 | |
Project Title: Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities | ||||
2019 | 1 | DOE | $206,500 | |
Project Title: Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers | ||||
2018 | 2 | Army | $1,149,110 | |
Project Title: Solid State High Voltage Switching Device for Multi-Point Initiation |
Key People / Management
Ranbir Singh -- President
Michael DiGangi -- Chief Business Development Officer
Ranbir Singh
Siddarth Sundaresan -- Director, Device Design & Fabrication
Michael DiGangi -- Chief Business Development Officer
Ranbir Singh
Siddarth Sundaresan -- Director, Device Design & Fabrication
Company News
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