SBIR-STTR Award

Silicon carbide (SiC) based stackable drift step recovery diodes (DSRDs) with 20 kV/1 kA/=1 MHz capability are proposed in this program for potential use in the next-generation of high-power microwave pulse generators of interest to a wide range of commercial and military applications, ranging from ultra-wide band telecommunication systems, short-range local positioning systems, power lasers, ground penetrating radars, pulsed corona processing, particle accelerators and power generators for electric discharge in gases. The novel SiC DSRDs will outperform their Silicon counterparts by virtue of the superior material properties of SiC as compared to Si, mainly higher breakdown field strength, drift velocity and higher thermal conductivity. The fabrication of the proposed SiC DSRDs can be conducted in a high-volume production foundry without the use of exotic high-temperature/long-duration process steps, required for optimum silicon based DSRD realization. By careful control and optimization of the epilayer/device design and processing steps used for device fabrication, the switching and power handling performance of the SiC DSRDs will be optimized. Novel low-inductance packaging solutions will be explored for creating > 20 kV SiC DSRD stacks with superior thermal/electrical performance for high (= 1 MHz) repetition rates

Benefit:
High voltage devices are also required in medical accelerators for cancer treatment and industrial systems for food irradiation and hospital waste sterilization. High voltage power systems such as X-ray and ion beam generators will benefit from the technology developed here. Industrial applications such as electrostatic precipitators, oscilloscopes and oil drilling are also expected to benefit tremendously from the development of these devices. DoD branches have a strong interest in developing these HV devices for railgun and directed energy weapon systems. For airborne and space-borne systems, HV devices will have a significant impact on applications in free electron laser, active electronic warfare, decoys and seekers. A compact and efficient power supply is expected to give a substantial advantage to the Air Forces next generation radars.

Keywords:
Pulsed, Pulsed, recovery, Power, DRIFT, high power microwave, opening switches, STEP,

GeneSiC Semiconductor is developing > 20 kV, > 1kA stackable 4H-SiC based DRSDs in this SBIR program for next-generation US NAVY applications featuring: Single-Chip ratings of = 2 kV and = 100 A Round, positive bevel-terminated devices with solderable topside and backside metallization Switching Times

Benefit:
Super-fast opening switches such as DSRDs which are able to form voltage pulses as high as 100 kV in a time.

Keywords:
silicon carbide, pico second pulse, Drift Step Recovery, high frequency, high voltage, Repetition Rate, diodes, pulsed power