SBIR-STTR Award

Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
Award last edited on: 1/15/2020

Sponsored Program
SBIR
Awarding Agency
DOE
Total Award Amount
$206,500
Award Phase
1
Solicitation Topic Code
13b
Principal Investigator
Siddarth Sundaresan

Company Information

GeneSiC Semiconductor Inc

43670 Trade Center Place Suite 155
Dulles, VA 20166
   (703) 996-8200
   contact@genesicsemi.com
   www.genesicsemi.com
Location: Single
Congr. District: 10
County: Loudoun

Phase I

Contract Number: DE-SC0019947
Start Date: 7/1/2019    Completed: 6/30/2020
Phase I year
2019
Phase I Amount
$206,500
Next-generation extreme fast charging stations with 400 kilowatt output is identified as key to significantly increase the market share of electric vehicles. As compared to the existing 50 kW fast charging stations, future 400 kW rated extreme charging stations directly connected to the medium-voltage electricity grid will require the development of 3300 volt rated, automotive-qualified silicon carbide power devices, which are not available in the commercial marketplace. Demonstrated device designs and process technology in combination with the use of a high-volume manufacturing strategy on large diameter silicon carbide wafers is proposed in this proposed program for commercial production of 3300 Volt rated medium- voltage silicon carbide MOSFETs for insertion into next-generation of extreme fast chargers. The proposed device and manufacturing strategies will drastically reduce the manufacturing costs for silicon carbide transistors and rectifiers, making them cost-competitive with the existing silicon technology. While tremendous progress has been recently made towards the manufacturing of 3300 volt silicon carbide MOSFET chips, significant effort is needed to make it into a viable product. The prime objective of the Phase I proposal is to complete the productization phase in order to commercialize these chips at the end of Phase 2.Electric vehicle power electronics manufacturers are expected to be direct customers of the proposed silicon carbide devices to be developed in this program. Reducing the weight of the power module, which represents 37% of the total weight will extend the insertion of extreme fast chargers and/or reduce the size and cost of the battery. Significantly reduced silicon carbide chip-sizes for the same current rating along with low-cost, high-volume manufacturing strategies proposed in this program will help meet the aggressive power electronics targets set for the electric vehicle industry by the DOE for the year 2022. This in turn will enhance the country?s energy security by reducing dependence on foreign oil, save money by cutting fuel costs for American families and businesses, and result in a cleaner environment by reducing harmful CO2 emissions from gas- powered vehicles.

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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