SBIR-STTR Award

Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching frequencies in excess of 1 MHz. To maximize the device performance, this project will demonstrate a new fabrication technology that significantly increases the breakdown voltage of GaN transistors and reduces their leakage current and on resistance. The threshold voltage of these devices will be in excess of 1 V.

Keywords:
Transistors, Transistors, Power Electronics, Gallium Nitride

This program aims to develop the technology for a new generation of normally-off GaN power transistors with breakdown voltages of 1000 V and linear current of 50 A. These devices will be fabricated through a combination of novel epitaxial structures and advanced fabrication technologies. Thanks to the very high critical electric field of GaN, in addition to the excellent transport properties of high electron mobility transistors, these devices will show much lower input and output capacitance than the state-of-the-art devices commercially available today, which will allow much higher switching frequencies and lower losses. The device performance will be tested through the fabrication of a power conversion circuit with efficiencies exceeding 90 %.

Keywords:
Gan, Gan, Power Electronics, Normally-Off Transistors, High Electron Mobility Transistor, Dc-Dc Power Circuit