SBIR-STTR Award

Reliable and efficient heat removal from silicon high power semiconductor devices is a major technical challenge. SPCO owns key technology which offers a highly reliable method of heat removal which causes virtually no material fatigue of the semiconductor or the bonding materials. This proposed bonding technique is based on longitudinally pliable direct-bonded structured copper. This technology allows encapsulation of multiple high power devices in a double side cooled module, very similar to medium power single side cooled IGBT module. The structured copper bonding technique offers at a temperature variation of 40C a life well above 15 million cycles while existing module bonding techniques under the same conditions barely reach 0.5 million cycles. Through the concept has been proven with diodes and SCRs, no work was performed on GTOs or MTOs. Additionally, a sizable work still needs to be done for process improvement before it becomes technically feasible for manufacturing. Phase I study is aimed at establishing eh optimum process and to investigate issues relating the use of structured copper with free-floating silicon devices and devices with large interdigitated structures. Applicability of this process to medium power IGBT or MCT modules will also be investigated.

Structured Copper is a high performance substrate material which can be Ndirectly bonded to power electronic devices. Its use removes the dry thermal Nand electrical interfaces found within all semiconductor disc type packages. HWith the removal of the dry interfaces, higher steady state and impulse 9currents may be applied to the power electronic device. This material allows up to a 25% increase in surge rating of devices and up to )40% higher steady state heat dissipation.

Benefits:
(High Power Electronic Building Blocks)High Pulse Power Electronic Devices & High Fault Current Suppression Systems

Keywords:
Power Electronic Copper Heat Suppression Pulse PEBB MTO