SBIR-STTR Award

Vertical Interconnects for 3D CMOS Imager
Award last edited on: 1/11/2006

Sponsored Program
SBIR
Awarding Agency
NASA : JPL
Total Award Amount
$75,000
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Helene Adams

Company Information

NanoSciences Corporation (AKA: NanoSystems Inc)

Hurley Farms Pk Bldg 1 115 Hurley Road
Oxford, CT 06478
   (203) 267-4440
   N/A
   N/A
Location: Multiple
Congr. District: 04
County: New Haven

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2003
Phase I Amount
$75,000
NanoSciences proposes to develop a vertical interconnect structure base on a novel high rate through wafer micromachining process for application to a novel massively parallel high-performance smart 3D CMOS imaging technology under development at JPL. The smart imager will exhibit ultra high contrast handling capacity and high speed readout for defense and reconnaissance applications with special emphasis on anti-blinding, fast tracking, and high speed object identification and acquisition. Large format 2D focal plane arrays have been built in both CCD and CMOS technology although imaging performance continues to improve, it comes at the cost of reduced dynamic range, reduced speed, and increased power dissipation. Reduced speed is of particular concern for space based tracking, reconnaissance and robotic applications, that require faster than real-time imaging for high-speed closed loop control systems. The above-mentioned problems can be solved by processing data closer to the imager sense elements employing vertically interconnected structures. Vertical stacking solves the problem of interconnectivity leading to the development of smart focal planes without sacrificing imaging performance. The development of a reliable vertical interconnection presents a significant technical challenge, if successful, it will revolutionize new imager architectures and circuits, enabling smart imager development. POTENTIAL COMMERCIAL APPLICATIONS Commercial applications of the vertical interconnection technology include generic interface chips for integrating CMOS circuitry to MEMS based sensor technology. Such applications include; precision mounts for MEMS based inertial sensors that will enable direct orthogonal mounting of sensors, compact 3D-integrated millimeter wave circuits for military and civilian telecommunications applications as well as novel vertical readout structures for staring focal plane array detectors, fluidic components for chemical analysis, medical diagnostic equipment and inkjet printheads.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
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Phase II Amount
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