SBIR-STTR Award

Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs
Award last edited on: 9/24/2013

Sponsored Program
SBIR
Awarding Agency
DOE
Total Award Amount
$900,000
Award Phase
2
Solicitation Topic Code
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Principal Investigator
Mark P D'evelyn

Company Information

Soraa Inc (AKA: SJS Technology Inc)

6500 Kaiser Drive
Fremont, CA 94555
   (510) 456-2200
   info@soraa.com
   www.soraa.com
Location: Single
Congr. District: 15
County: Alameda

Phase I

Contract Number: DE-FG02-11ER90202
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
2011
Phase I Amount
$150,000
Soraa proposes to develop low-cost, large area semipolar ammonothermal true bulk GaN substrates. Semipolar bulk GaN substrates are expected to be transformative for high power blue, green, and/or yellow LEDs, enabling high efficiency, high power density LEDs at costs below $3/kilolumen. The large cost reduction will enable widespread implementation of high-efficiency semipolar LEDs, enabling energy savings for general illumination in residential and commercial buildings of up to 1 quad/year by 2030. Semipolar crystallographic orientations of bulk GaN offer key advantages over conventional orientations for mid-spectrum light emission but are currently much too small and far too expensive to be relevant to LED manufacturing. The objectives for this Phase I project include: 1. Survey the growth properties of a range of semipolar orientations in Soraas novel high-rate SCoRA ammonothermal bulk crystal growth process, identifying at least one orientation with stable long-term growth and surface morphology characteristics and a growth rate enabling low-cost manufacturing upon scaleup. 2. Fabricate semipolar bulk GaN crystals with an area equivalent to a 1 inch diameter by means of a method that can be scaled up to 4 & quot; within two years. Soraa envisions that scale-up of the semipolar bulk GaN technology to 4 & quot; diameter, together with reduction of dislocation densities to below 104 cm-2, enabling further efficiency improvements, would be carried out during a follow-on Phase II effort

Phase II

Contract Number: N/A
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
2012
Phase II Amount
$750,000
This project will develop disruptive substrate technology for gallium nitride based light emitting diodes (LEDs) to improve performance and reduce costs. The new technology could revolutionize solid state lighting and lead to enormous energy savings