SBIR-STTR Award

A New Large Area Monolithic Avalanche Photodiode Array Having Widespread Applications and Lower Manufacturing Costs
Award last edited on: 4/3/02

Sponsored Program
SBIR
Awarding Agency
DOE
Total Award Amount
$72,890
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Dante Piccone

Company Information

Silicon Power Corporation

275 Great Valley Parkway
Malvern, PA 19355
   (610) 407-4700
   harshad_mehta@siliconpower.com
   www.siliconpower.com
Location: Multiple
Congr. District: 06
County: Chester

Phase I

Contract Number: DE-FG02-98ER82668
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
1998
Phase I Amount
$72,890
Avalanche photodiode devices, needed for nuclear physics research, have the potential for widespread application, but their large scale production into commercial products has, so far, been prevented by the lack of large detection area, performance, reliability and high manufacturing cost. A new large area monolithic avalanche photodiode array based on planar deep diffusion technology using a novel self-terminating high voltage junction design will be developed which overcomes the limitations associated with current avalanche photodiodes. Phase I will experimentally demonstrate the feasibility of this monolithic array by fabricating the devices and measuring the breakdown voltage, gain, leakage current, and isolation.

Commercial Applications and Other Benefits as described by the awardee:
Large area monolithic arrays of avalanche photodiodes with good performance and reliability should enable new generations of medical imaging products, environmental monitoring equipment and gamma ray instrumentation. These devices can result in health care containment as well as find use in research and defense applications.

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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