Aluminum Nitride (A1N) is a refractory ceramic which exhibits a high piezoelectric coefficient in oriented polycrystalline form . It has been used for a new class of novel high frequency devices, Thin Film Resonator (TFR) filters. These microminiature filters are needed for mimic and other high frequency DOD communication systems. The new TFR technology promises high performance devices that are 10,000 times smaller than conventional technologies, are compatible with microwave chips, and are made by the same wafer processing that is employed in integrated circuits. TFR devices fabricated on GaAs and SL substrates have shown high performance at 1 ghz frequencies and should find applications in a number of systems . Fabrication of these devices involves undesirable steps to mechanically isolate a portion of the film from the substrate, complicating integration with mimic chips. This project will study a novel approach that to the isolation problem which will effectively isolate the resonator and allow the devices to be fabricated on a GaAs and SL mimic chip in a manner that does not require etching of the substrate. Anticipated benefits/potential commercial applications - successful completion of the Phase I and Phase II programs will bring to DOD system contractors a significant new technology for implementation with advance integrated microwave systems. It is the intent of TFR technologies to be a supplier to manufacture the TFR device technology for industry and engage in second source licensing where appropriate.Key words: filter, resonators, mimic, piezoelectric, aluminum nitride, acoustic, microwave.
