
Demonstration of High Power, High-Brightness IR (1.8-1.9 µm) Strain-Compensated InGaAsP/InGaAs QW Laser ArraysAward last edited on: 5/25/2005
Sponsored Program
SBIRAwarding Agency
DOD : AFTotal Award Amount
$849,938Award Phase
2Solicitation Topic Code
AF04-010Principal Investigator
Brian McDermottCompany Information
Phase I
Contract Number: ----------Start Date: ---- Completed: ----
Phase I year
2004Phase I Amount
$99,938Benefits:
Long wavelength lasers can be used in many applications including sensing, chemical detection and for pumping high power solid state lasers.
Keywords:
1.9 um lasers, long wavelength lasers, InP-based lasers
Phase II
Contract Number: ----------Start Date: ---- Completed: ----
Phase II year
2005Phase II Amount
$750,000Benefits:
The initial anticipated benefit is the development of an 1800nm laser products to optically pump 3-5um Sb-based semiconductor lasers used in US Air Force countermeasure applications. In addition, we expect to use this new InP laser capability to expand our commercial and military InP laser product portfolio. We anticipate developing improved telecommmunications lasers at 1550nm as well as high-power lasers at 1310, 1450, 1550 and 1930nm. These high-power lasers have use in other military applications, including eye-safe laser pumps for Er:YAG solid-state lasers.
Keywords:
Indium Phosphide, laser, 1800nm, InP, InGaAsP, high-power, pump laser, high temperature