In this work, we will demonstrate military specification compatible 1.8 - 1.85 µm InP-based diode pump laser arrays with a power output exceeding 10 W, the critical milestone necessary to enabling system insertion. These sources can help in the critical development of a variety of military and home security applications, including optical pumping sources for 3-5 µm lasers, chemical sensing, laser surgery, laser radar, inter-office broadband wireless communication links, and last mile fiber-optic communications. During the first 12 months of the Phase II, we propose to optimize the laser structure and epitaxial growth process for maximum output power, maximum T0 and T1 and maximum power efficiency. We will establish a quick-turn-around broad-area laser fabrication and test capability in close proximity to the epitaxial growth processes. This will allow extensive study of the key factors needed for optimizing the laser structure in order to obtain near-theoretical maximum output powers. In parallel, the laser element fabrication process and the array bar packaging process will be optimized with a subcontractor. During the second 12 months of the program, the optimized laser structure will be integrated with the refined laser fabrication and packaging process.
Benefits: The initial anticipated benefit is the development of an 1800nm laser products to optically pump 3-5um Sb-based semiconductor lasers used in US Air Force countermeasure applications. In addition, we expect to use this new InP laser capability to expand our commercial and military InP laser product portfolio. We anticipate developing improved telecommmunications lasers at 1550nm as well as high-power lasers at 1310, 1450, 1550 and 1930nm. These high-power lasers have use in other military applications, including eye-safe laser pumps for Er:YAG solid-state lasers.
Keywords: Indium Phosphide, laser, 1800nm, InP, InGaAsP, high-power, pump laser, high temperature
