
EpiWorks Inc Profile last edited on: 7/19/19
CAGE: 3C346
UEI:
Business Identifier: Custom-designed, high-yield, high performance epitaxial wafers Is this YOUR Company?
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Location Information
Location: Single
Congr. District: 13
County: Champaign
Congr. District: 13
County: Champaign
Public Profile
EpiWorks develops epitaxial devices. Epitaxial devices consist of nanolayers of semiconductor crystals that are uniformly deposited in sophisticated deposition tools to form an âepi-wafer.â Combining different semiconductor materials and dopants in an epi wafer is the key step in determining the performance capabilities of photonics and RF semiconductor components. EpiWorks is the leading producer of advanced III-V epitaxial wafers that are tailored for optimal performance in multiple next generation applications. From LED and laser wafers used in displays to RF wafers used in smartphonesâEpiWorks products are geared toward enabling higher performance photonic and RF components for consumer, communications, network and mobile applications and RF components for wireless handsets, tablets and the Internet of things. But EpiWorks is also a next-generation semiconductor technology and manufacturing company that brings expertise with epitaxy, device design, and manufacturing under one
Extent of SBIR involvement
Synopsis: Awardee Business Condition
Employee Range
50-74Revenue Range
15M-20MVC funded?
NoPublic/Private
Privately HeldStock Info
----IP Holdings
1-4Awards Distribution by Agency
Most Recent SBIR Projects
Year | Phase | Agency | Total Amount | |
---|---|---|---|---|
2010 | 1 | MDA | $99,011 | |
Project Title: Novel LWIR Detector Technology for high-yield, large format FPAs | ||||
2008 | 2 | NASA | $595,411 | |
Project Title: High-Efficiency, High-Temperature, Ultra-Lightweight GaP-Based Solar Cells | ||||
2006 | 2 | AF | $849,364 | |
Project Title: Next-generation 30-45% Efficient Multi-junction Solar Cell | ||||
2005 | 1 | AF | $99,995 | |
Project Title: High Speed Readout for Photodiode Focal Plane Arrays | ||||
2005 | 2 | AF | $849,938 | |
Project Title: Initial Demonstration of High-Brightness IR (1.8-1.9 µm) Strain-Compensated InGaAsP/InGaAs QW Lasers |
Key People / Management
Quesnell Hartmann -- President
David Ahmari
Brian McDermott
David Ahmari
Brian McDermott
Company News
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