SBIR-STTR Award

Ultra-Lightweight, High-efficiency (45%) Si-Based Triple Junction Solar
Award last edited on: 4/7/2010

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$849,364
Award Phase
2
Solicitation Topic Code
AF05-023
Principal Investigator
Brian McDermott

Company Information

EpiWorks Inc

1606 Rion Drive
Champaign, IL 61822
   (217) 373-1590
   epiworks@epiworks.com
   www.epiworks.com
Location: Single
Congr. District: 13
County: Champaign

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2005
Phase I Amount
$99,848
We will demonstrate novel, Si-based technology for ultra-lightweight, high-efficiency, triple junction solar cells. Next-generation satellites require increased payload mass and power budget capabilities. Ultra lightweight, 40% efficient solar cells employing Silicon substrates will reduce array size and solar cell payload mass while still enabling power level scale-up. Our advanced, next generation design will enable extremely high efficiency by using materials with ideal band gaps for efficient solar cells. By employing Si substrates (> 2x lower density than Ge), solar cell payload mass will be reduced by more than two times over current Ge-based technology. Current state-of-the art solar cell technology employs tandem Ge/GaAs/InGaP junctions on Ge substrates. This approach has shown promise for 40% converstion efficiency by employing 1.0 eV InGaAsN material as an intermediate cell between Ge and GaAs. However, InGaAsN has shown fundamental limitations due to the presence of deep level traps. A new alternative Si-based approach could result in similar 40% efficiencies in addition to substantially lower weight and cost. Silicon has a 1.1 eV bandgap, significantly lower cost and weight than Ge, and provides superior mechanical stability and radiation hardness.

Benefits:
The primary anticipated benefit is the development of a new Si-based solar cell technology for application in next generation satellites used by the US Air Force. We will develop ultra lightweight, 40% efficient solar cells employing Silicon substrates. Our advanced design will enable extremely high efficiency by using materials with ideal band gaps for efficient solar cells, and the use of Si substrates (Si has > 2x lower density than Ge) will reduce the solar cell payload mass by more than two times over current Ge-based technology. In addition to space-based applications, we anticipate commercial potential for terrestrial solar cells. By employing Si substrates this approach combines the low cost of Silicon technology with the high efficiency of Ge-based tandem solar cells.

Keywords:
Solar Cell, Silicon, GaP, GaAsNP, Triple Junction, High-efficiency, Lightweight, Satellite

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2006
Phase II Amount
$749,516
Next-generation satellites require increased payload mass and power budget capabilities. Ultra lightweight, 40% efficient solar cells employing Silicon substrates will allow for a significant power level scale up for a fixed solar panel size. The purpose of this proposal is to successfully demonstrate a high-efficiency Si-based solar cell technology. To achieve this goal, we ultimately will develop triple junction solar cells that employ Si substrates as a 1.1 eV bottom cell and heterogeneous III-V layers as a 1.5-1.7 eV middle cell and 1.9-2.1 eV top cell. Our advanced, next generation design will enable extremely high efficiency by using materials with ideal band gaps for the highest possible efficiency solar cells, and Si substrates (> 2x lower density than Ge) will reduce the solar cell payload mass by more than two times over current Ge-based technology

Keywords:
Silicon, GaP, Gallium Phosphide, GaAsNP, Solar Cell, Heterogeneous, High efficiency, Multi-junction