This proposal is intended to address the development of high linearity, high-power, quadrature balanced amplifiers for active transmit arrays supporting three different frequency bands from 5.5 to 18.5 GHz. We propose an innovative solution for implementation in a commercial Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) process. This solution utilizes a differential topology combined with a broadband ft doubler circuit to enable a commercial SiGe HBT technology to achieve high output powers and wide bandwidths suitable for multi-function phased array applications. High linearity is achieved with the use of SiGe HBT NPN devices with relatively high Early voltages in a quadrature balanced structure minimizing third order harmonics. VT Silicons extensive experience in developing commercial SiGe power amplifiers will aid significantly in developing a practical solution. Commercialization is one of the major advantages of silicon-based technologies given its proven volume manufacturing history, lower cost, greater availability, and ease of integration. In the first phase of this contract, VT Silicon intends to demonstrate the feasibility of a high performance, cost-effective and compact solution by extensive circuit and electromagnetic modeling, simulations and thermal analysis. The proposed broadband SiGe PA solution will be integrated with state-of-the-art module technology developed by Lockheed Martin. Benefit VT Silicon intends to commercialize the work proposed for this STTR contract and develop silicon-based power amplifiers for variety of high-power and high linearity commercial applications. Mobile phones and IEEE 802.11 based Wireless Local Area Networks (WLAN) are some of the major applications targeted for commercialization of this technology. Keywords module, SiGe HBT, high linearity, quadrature, integrated circuit, power amplifier, high power, Broadband
