SBIR-STTR Award

Highly Efficient Exhaust Cleanup Technology for Environmentally Benign Processing
Award last edited on: 4/29/2014

Sponsored Program
SBIR
Awarding Agency
NSF
Total Award Amount
$715,534
Award Phase
2
Solicitation Topic Code
-----

Principal Investigator
Ofer Sneh

Company Information

Sundew Technologies LLC (AKA: Atomic Layer Epitaxy, ALE)

12300 Grant Street
Thornton, CO 80241
   (303) 466-2341
   info@sundewtech.com
   www.sundewtech.com
Location: Single
Congr. District: 07
County: Broomfield

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2004
Phase I Amount
$99,980
This Small Business Innovation Research (SBIR) Phase I project will develop a novel integrated reactive abatement module (IRAM) that effectively removes solidifying chemicals from the exhaust effluent of deposition and etch manufacturing processes. Growing safety concerns and escalating costs dedicated to environmental protection is one of the drivers to continuously migrate semiconductor manufacturing outside of the US. In this project, hazardous chemicals will be reactively converted into inert solid films over a removable high-area filtration element. An integrated high-speed downstream pressure control will actively suppress IRAM-induced pressure fluctuations that may affect the process. The reactive process will apply highly effective chemical reactions to convert the solidifying chemicals into stable inert films. Objectives include superior maintainability of low-pressure exhaust manifolds and pumps and substantially improved safety of device processing systems, hence promoting safe and environmentally benign semiconductor manufacturing at a competitive cost. Broader impact: Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD) and Reactive Ion Etching (RIE) are considered the cornerstones of semiconductor manufacturing technology. In the last decade these manufacturing-technologies have also migrated into the explosively growing area of nano-technology. These process techniques emit reactive, toxic and solidifying chemicals and produce a hazardous and destructive residue in low-pressure exhaust manifolds that clogs up the conduits and destroys the vacuum pumps. Slow and inefficient chemical reactions, driven by the typically low pressure and low temperature conditions in exhaust manifolds, convert the reactive exhaust mixture into hazardous residue instead of completely reacted inert films. Frequent maintenance requires ambient exposure of these hazardous-residue-containing exhaust manifolds with risks to the workers and the workplace. Growing safety concerns and escalating cost dedicated to environmental protection severely hampers the semiconductor industry and reduces its competitiveness in the US. Overcoming this deficiency, IRAM technology will apply environmentally benign chemistry with a localized production of short-lived highly reactive species capable to completely extracting the solidifying chemicals out of exhaust streams to produce inert solid films. This novel chemistry has a broad range of device processing applications and can positively impact manufacturing costs. Key Words: CVD, RIE, ALD, abatement, semiconductor manufacturing, LPCVD, foreline, EH&S, environmental health and safety. E.B.A 5/24/04

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2005
Phase II Amount
$615,554
This Small Business Innovation Research (SBIR) Phase II project will develop a novel, integrated reactive abatement model (IRAM) that effectively removes solidifying chemicals from the exhaust effluent of atomic layer deposition (ALD) manufacturing processes. ALD and related manufacturing technologies are widely used in the electronics industry and will be critical for emerging nanotechnology applications. However, a key issue is the emission of reactive, toxic and solidfying chemicals that clog and destroy equipment, requiring frequent cleanup and replacement, and create worker safety and environmental concerns. Objectives of this project include developing suitable abatement chemistries and systems for several important generic ALD processes and deriving generalized IRAM methodology that can be used to produce a module that can be integrated into ALD equipment.