This Small Business Innovation Research Phase I project will develop bottom anti-reflective coatings (BARCs) for production of advanced semiconductor devices by 157 nm lithography . The NSF Phase I technical objectives are to demonstrate the feasibility of potential technical approaches to workable 157nm BARCs. The prototype 157 nm BARCs will be produced and characterized for critical industry requirements such as low reflectivity, fast plasma etching rate, and lithographic performance. At least one prototype will be selected and optimized for use with 157-nm photoresists so that the commercialization will be projected in the Phase II. The 157-nm BARCs developed from the NSF Phase I study will result in a significant step forward for 157-nm lithography technology and contribute to the future of advanced semiconductor devices (integrated circuits) fabrication
