SBIR-STTR Award

Production of microelectronic devices with pattern features in the sub-0.25 micron regime require significant advances in microlithographic and manufacturing technologies. Current Iline stepper tools are patterning state-of-the-art devices with Depth of Focus (DOF) budgets of 1 micron and below, a manufacturing nightmare. Recent research has demonstrated that Chemical-Mechanical Polishing (CMP) planarization significantly alleviates DOF problems by achieving superior global planarization. CMP planarization technology has the potential to extend current manufacturing tools to the 0.25 micron regime and beyond. However, the major problem with CMP is that currently, there is no effective, Commercially available means of measuring and controlling the thickness of the layer being planarized in a real-time, in-situ manner. Researchers are developing a non-contact technology and method to provide realtime, in-situ process control for CMP planarization.Commercial Applications:Commercial applications of the research include a non-iterative, precise CMP process. Such a process is useful and relevant for most types of integrated circuit manufacturing.

This Small Business Innovation Research (SBIR) Phase II project develops a thickness monitoring and control technology for chemical mechanical polishing (CMP) of semiconductor thin films. Phase I established a baseline capability in this new non-contact, real-time, in-situ monitoring technique. Phase II further develops a practical system utilizing a dedicated monitoring region at a wafer center. The approach is one of continuous interferometric monitoring of film thickness from back of the wafer. An industrial partner, R. Howard Strasbaugh, Inc. of San Luis Obispo, CA, is supporting Phase II with in-kind services and use of facilities. The technology is expected to find commercial application in CMP operations in the semiconductor industry. It can alleviate depth-of-focus problems and other problems encountered in multi-level metallization designs.