TrueNano, Inc. will in collaboration with the University of Colorado and industry partners, develop a novel single-wafer, high-throughput hot filament CDV reactor for the growth of high quality silicon carbide (SiC) epitaxial layers, suitable for the next generation of power electronic devices and systems. This includes the design and simulation of the reactor, the development of a throughput model, a growth model and cost model and the simulation of the reactor throughput and material uniformity. Filament reliability will be determined based on lifetime measurements and failure analysis. HFCVD material will be characterized extensively and used to demo a device with high breakdown field. This proposed technology will ultimately result in lower cost SiC materials, devices and systems, due to faster throughput, larger wafer size, and higher device yield, as desirable for a multitude of military and commercial applications.
Benefit: Silicon carbide power electronics are rapidly replacing their silicon counter parts, especially in advanced mobile platforms, where high efficiency or low power dissipation is paramount, and where operation at higher switching frequencies contributes to the reduction of volume, weight and cost of the balance of materials. This in turn translates to reduced fuel consumption, increased range and reduced cost of advanced mobile platforms, while adding the increased ruggedness needed to operate in harsh environments. As the cost of SiC material and devices is reduced, this technology will become the preferred technology for high voltage systems, delivering better performance at lower cost.
Keywords: Epitaxial Growth, Epitaxial Growth, silicon carbide, scaling, hot filament, cvd
