SBIR-STTR Award

W-band GaN IMPATT Devices
Award last edited on: 6/5/2023

Sponsored Program
SBIR
Awarding Agency
DOD : Navy
Total Award Amount
$1,149,888
Award Phase
2
Solicitation Topic Code
N152-114
Principal Investigator
John H Kuno

Company Information

QuinStar Technology Inc

24085 Garnier Street
Torrance, CA 90505
   (310) 320-1111
   kuno@quinstar.com
   www.quinstar.com
Location: Multiple
Congr. District: 33
County: Los Angeles

Phase I

Contract Number: N00014-16-P-2014
Start Date: 11/2/2015    Completed: 3/1/2017
Phase I year
2016
Phase I Amount
$149,962
QuinStar Technology, Inc. proposes to develop a GaN IMPATT (IMPact-ionization Avalanche Transit Time) device operating at W-band for power generation applications. The approach is based on advanced material development of low defect GaN vertical structures, comprehensive device modeling and optimization, and state-of-the-art fabrication and packaging techniques, supported by a strong team and commercialization strategy.

Benefit:
Navy: EW and radar (seeker) applications such as NEMESIS, AARGM programs; Other DoD: Tube replacement and legacy transmitter element replacement such as MILSTAR SATCOM applications; Commercial/Industrial: NASA remote sensing sources for MMW and THz frequencies, NASA MMW deep space communications, weather/security/surveillance radars, THz noise sources.

Keywords:
millimeter waves, millimeter waves, avalanche diode, THz, Gallium Nitride GaN, IMPATT, RF power generation, W band source

Phase II

Contract Number: N68335-21-C-0742
Start Date: 9/29/2021    Completed: 10/6/2023
Phase II year
2021
Phase II Amount
$999,926
As a result of a successful Phase I effort, QuinStar Technology, Inc. proposes the Phase II effort to continue development of a W-band GaN IMPATT device. The proposed work will focus on a device-level demonstration of W-band power generation using GaN IMPATTs (Phase II Base), followed by the productization of such a device (Phase II Option 1). This work is expected to enhance DONs technological capabilities and directly benefit several ongoing programs.

Benefit:
For Navy: High-efficiency IMPATT diodes for high-power generation are essential to radar systems. The superior power output at MMW and THz frequencies makes the proposed GaN IMPATT work suitable for jamming and anti-jamming applications. In addition to the applications derived from the acquisition program NEMESIS, QuinStar identifies the ongoing production AARGM program as a potential end user of the proposed work. QuinStar supplies the current AARGM missile program with an advanced millimeter-wave transceiver utilizing Si IMPATT technology in its miniaturized transmitter. When it reaches maturity, the proposed GaN IMPATT will be a natural transition from the current Si devices. Most likely, this will be the first product and customer we can engage at the very beginning. For Non-Navy: Although the current work is only for W-band diodes, the same technology can be extended to other millimeter-wave frequency bands. Applications for high-power generation include SATCOM applications and radar applications in the Ka, E, and W radar bands for all the military branches. The estimated market size for the W-band RF power source for military applications alone is in the range of $10M per year and growing rapidly. Outside W-band, SATCOM at Ka-band has been widely adopted. Previously, IMPATTs were used in MILSTAR Cross-link and MILSTAR ground terminals. One application of the GaN IMPATT is a radio replacement and upgrade plan for aging SATCOM satellites like MILSTAR. For Commercial Applications: RF sources of MMW and THz radiometers for NASA remote sensing applications MMW deep-space communications for NASA Emerging MMW communications applications Weather and environmental monitoring radars Applications include both airborne and ground-based. Potential customers include commercial instrument makers, avionics, etc. Security and surveillance radars for commercial, industrial, and municipal applications These modern radar-based sensors present much higher resolution and ranging than other sensors. Measurement and calibration equipment, such as THz noise source, etc.

Keywords:
W-Band, RF Source, Impact Ionization, IMPATT, GaN, High Power generation