The proposed work deals with high brightness, liquid alloy sources (LAIS) of silicon based dopants (e.g., As, B, P) and GaAs based dopants (e.g., Si, Be) that can be used in mass separated focusing columns to provide sub-micron focused beams of a specified species. Such a system can be used for mask-less and resist-less ion doping in the fabrication of semiconductor devices of Very Large Scale Integration (VLSI). The specific objective of the Phase II work is to bring about a commercially suitable LAIS of these dopants with lifetimes in excess of 200 hrs. In particular, the focus will be on alloys such as PdAsB and AuBeSi, all of which have been investigated in Phase I and which show promise of meeting the life time requirements. Our goal will be to develop a source configuration that will be suitable for a number of alloys and compatible with focusing columns already in existence. Substantial progress was made in the Phase I project on strategies of the alloy synthesis and source configuration. Source emission characteristics such a beam composition and energy spread versus source lifetime will be measured. Every effort will be made to optimize the source performance as it effects the focused beam size, current stability and lifetime.
