SBIR-STTR Award

We will investigate the radiation effects on microelectronics due to gamma-rays and beta-rays and compare the effects on electrical and material properties between the two radiation types to formulate a quantitative mapping of radiation types (gamma and beta) and effects. The purpose is to: 1) Develop an overall physics-based strategy; 2) Define the experimental design, guided by analytical calculations, preliminary simulations, and the literature; 3) Measure gamma-ray effects in microelectronics; 4) Measure beta-ray (electron) effects in microelectronics; 5) Compare and develop a quantitative relationship between the dosimetric and radiation effects between gamma- and beta-ray radiation via guidance of electrical and material experimental result. Importantly, we will compare the radiation effects from this radiation such that future experimentation, simulation/modeling, and analyses can more confidently rely on the body of knowledge previously generated (primarily in gamma-ray fields). Phase I: Demonstrate and show feasibility of a methodology to develop test environments that will demonstrate survivability and extracting key metrics of this survivability using gamma- vs. beta-ray environments. We will consider whether existing methods of generating gamma and beta environments can be used, or whether innovative approaches are needed. Phase II: Implement the Phase I results in a prototype test design. Demonstrate the methodology by conducting an experimental study where the microelectronics are tested in partial and combined gamma- and/or beta-ray environments. Consider whether existing methods of generating, testing, and assessing microelectronics in gamma and beta environments can be used, or whether innovative approaches are needed. Phase III: Develop a quantitative comparison between gamma vs. beta environments. This will be based on Phase II experimental results, analysis of dose contributions to various components of the microelectronic architecture and resulting impacts on material and electrical properties. Here, the assessment of commercial/civil vs. military radiation hardness requirements apply. Approved for Public Release | 21-MDA-11013 (19 Nov 21)

This Phase II work will develop a methodology for radiation hardness testing of microelectronics. This methodology includes understanding of device physics and irradiation sources, as well as utilization of irradiation facilities and dosimetry of irradiated microelectronics. The methodology necessarily incorporates design of testing procedures, development of experimental setups including microelectronic measurements, and performing statistical analysis of device radiation effects data. Simulations and modeling are important to understand the induced radiation effects at the component level. In Phase I of this project, we began to develop testing methodologies using available radioactive source at the University of Utah (UofU). This included preliminary calculations, experimentation, and formulation of understanding the radiation effects in tested devices (e.g., diodes and MOSFETs) via testing analysis. We completed the goals of Phase I and demonstrated the efficacy of our methodology. In Phase II, we will continue to develop our methodology for testing the radiation effects in microelectronics from gamma- and beta-rays. We will compare the effects on electrical and material properties between the two radiation types to formulate a quantitative mapping of radiation types (gamma and beta) and effects. We will also test the radiation hardness of Rad Hard microelectronics and compare them against standard COTS devices. The project purpose is to: 1) Refine our overall physics-based strategy; 2) Further define the experimental design, guided by analytical calculations, simulations, and prior test results; 3) Measure gamma-ray and beta-ray (electrons) effects in microelectronics using a variety of irradiation sources; 4) develop simulations and models for understanding radiation interaction and induced electrical effects in microelectronics; 5) Develop a table top unit for irradiation testing that can produce photons (gamma-ray energy equivalent x-rays), electrons, and importantly, simultaneously mixed photon/electron radiation fields for microelectronics testing; 6) perform analysis of radiation effects against a variety of parameters (e.g., device powering, radiation TID, radiation type, energy, and duration, device radiation tolerance, etc.). The STTR team for this project is InnoSys, as the small business concern, and University of Utah (UofU) Nuclear Engineering Program in the Department of Civil and Environmental Engineering as the research institute. Approved for Public Release | 22-MDA-11340 (16 Dec 22)