Current large format focal plane array (FPA) imaging sensors for imaging in low-light conditions in the near infrared / short wavelength infrared (NIR/SWIR) regions are limited by poor signal-to-noise. Electron avalanche photodiodes (e-APDs) using HgCdTe provide internal gain with very little excess noise and allow high signal-to-noise in low-light conditions. The readout integrated circuit (ROIC), with digital readout, utilizes radiation hardness by design (RHBD) and tolerates high radiation environments. In Phase II, Black Forest Engineering (BFE) will develop a low light NIR/SWIR FPA in a large array format and small pixel pitch that will meet or exceed performance goals identified in the topic. Approved for Public Release | 16-MDA-8951 (15 December 16)