Under a recently completed Air Force SBIR Phase II program, we demonstrated the initial feasibility of a back-illuminated p-on-n LWIR HgCdTe junction photodiode formed by diffusion of arsenic from a vapor source. This initial successful demonstration used a mesa format. Our proposed Phase I program will continue the development of the basic arsenic-vapor-diffused lateral-collection micro-junction process, extending the process to a planar architecture and to small-area junctions and demonstrate the overall feasibility of this new architecture, with the goal of achieving higher operability than the traditional two-layer mesa Very Long Wave Infrared (VLWIR) HgCdTe p-on-n devices achieve. Our Phase II program will further extend this work to large-format VLWIR FPAs and demonstrate improved operability in 512x512 arrays with 20x20 µm² unit cells. The combination of our novel methods and creative processing techniques is the key to the success for this new technology.
Keywords: Infrared, Ir, Focal Plane Array, Fpa, Electro-Optics
