SBIR-STTR Award

AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
Award last edited on: 3/13/2012

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$1,099,783
Award Phase
2
Solicitation Topic Code
MDA08-029
Principal Investigator
Vinod Adivarahan

Company Information

Nitek Inc

1804 Salem Church Road
Irmo, SC 29063
   (877) 230-5338
   info@nitekusa.com
   www.nitekusa.com
Location: Single
Congr. District: 02
County: Richland

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2009
Phase I Amount
$99,810
The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a power converter/inverter. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. Large gate devices will be fabricated in the Phase I to establish the feasibility of our device design. Nitek currently has the baseline materials technology which is sufficient for our Phase I program needs. It will also to be improved under a separate Air-Force supported Phase I SBIR program. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program with DOD test labs (WPAFB and the Joint Services Task Team). In the Phase II program we will expand the gate peripheries, develop the packaging for thermal management and demonstrate circuits using the AlInN-GaN HEMT building block. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.

Keywords:
Alinn, Lattice-Matched Epilayers, Moshemts, High-Voltage Switch, Power Converter

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2011
Phase II Amount
$999,973
The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.

Keywords:
Alinn, Lattice-Matched Epilayers, Moshemts, High-Voltage Switch, Power Converter, Enhancement Mode, Depletion Mode