During Phase I, an X-Band to W-Band reconfigurable mix-mode digital/photonic/RF transceiver MMIC will be delivered that demonstrates >8 GHz of instantaneous bandwidth. The high speed digital circuits will demonstrate digital control and DSP capability on-chip with high sensitivity (low phase noise, low nose figure) MMW T/R section and ultra fast switching, 1.5µm PIN diode on lattice-engineered, high power InP wafers. This will establish the basis for the low cost, production compatible, high power, multi-channel phase shifter antenna integrated mix-mode transceiver MMIC to be developed and demonstrated in Phase II. This technology will enable plug-and-play multiple waveform generation and processing capabilities for diverse RF applications.
Keywords: In Gaas Pin Diode Hbt, Lattice Engineered Inp Hemts, Ultra High Speed Inp Digital Circuits, Mix-Mode Transceiver
