SBIR-STTR Award

SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and proton radiation. Here, SemiSouth, Auburn, and Georgia Tech propose testing of SemiSouth SiC VJFETs and Auburn MOSFETs over a temperature range of ambient to 300C, both DC and dynamic testing, done pre- and post-radiation test. Gamma radiation will be from a Co 60 source, at 1.33 MeV, and the proton radiation will be from 1-4 MeV and 63 MeV. The analyis will help steer the development of radiation-hardened SiC switches in Phase II

Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (SiC, GaN) in the transmitter/receiver. These systems will require compact, efficient, temperature tolerant power supplies and converters typically requiring a 600 V class of power devices. SiC is a logical candidate for such applications. However, reliable and affordable device technology is essential to realize the theoretical benefits of SiC in these critical applications. In order to determine if SiC is ready for insertion in these applications, this Phase II will fabricate devices using SemiSouth 4H-SiC VJFET and SBD technology designed to meet the current, voltage, high temperature, and radiation hardness required for MDA radar power supply applications. These parts will then be tested individually in high temperature and high radiation environments and then tested in a circuit of direct relevance to the applications above. The results of this work will provide a fact based timeline for insertion of SiC devices for power conditioning applications that will extend past the applications listed here into many other applications such as motor drives for more or all electric aircraft.

Keywords:
Silicon Carbide, High Temperature Electronics, Radiation Hardness, Radar Power Supply, Jfet