There is a need for multicolor far infrared detection with increased operating temperatures, resolution, and dynamic range. We are proposing to develop a dual band infrared detector based on transfer-doped multi-quantum wells made of III-V nitride semiconductors. During Phase I, the proposed detector will be designed and fabricated. Dual band far infrared absorption will be demonstrated at low temperatures. In Phase II, the design and the growth conditions will be optimized and prototype multicolorvery long wavelength infrared focal plane array will be built. The responsivity in far infrared wavelengths, resolution, dynamic range, and spatial uniformity will be evaluated. Successful completion of the project may provide low-cost sensitive VLWIR focal plane array operating at higher temperatures than prior art. Infrared imaging and space surveillance; Public safety and security; Medical equipment, Search and Rescue.
