This Phase I program is aimed at demonstrating the principle of an approach for the growth of 4H-SiC boules 50 mm in diameter but of length equal to 50 mm, which is approximately twice the length of boules grown by convential approaches. Also in Phase I, the grown boules will be sliced into wafers, lapped, and polished; the polished wafers will be characterized for structural properties; comparisons will be made with the conventially-produced SiC material grown to ~25 mm length. In Phase II, the Phase I demonstrated material will be implemented to demonstrate the production of commercially feasible, long, 4H n-SiC boules. Anticipated Benefits/Commercial Applications: The proposed approach to grow longer SiC boules offers the potential to reduce the process time in the growth of SiC boules, reduce the cost of producing single wafers, and reduce the cost of commercial SiC wafers, all of which will stimulate widespread commercialization of SiC devices for power electronics, RF, and microwave applications.
Keywords: Silicon carbide, sublimation, high power electronics , SiC, crystal growth
