Silicon based charged couple devices (CCD) have been the workhorse of solid state imaging technology for use in the visible spectrum (400-700nm). Unfortunately silicon systems have limited response in the ultraviolet (190-400nm). We propose an entirely new approach to imaging in the ultraviolet range, utilizing high surface area materials, that represents a paradigm shift in imaging technology. We expect quantum efficiencies of greater than 10% from 190-400nm. Inherent in our approach is the ability to produce imaging systems that are not constrained by the size of a single crystal silicon wafer but instead are scaleable to dimensions that can be measured in square feet. In addition our device architecture will allow for the exposure of each individual pixel to be user defined. This will allow discriminating targets that have high contrast such as glare or rocket plumes.
