This Small Business Innovation Research Phase I project proposes the development of novel materials to be used in a ferroelectric FET (Field Effect Transistor) memory cell. The proposed memory cell is non-volatile utilizing a non-destructive readout, single transistor design. As a result it has unlimited endurance, very small cell size and fast read and write. The most important properties to be evaluated are dielectric constant, coercive field and memory window. Based on the determination of these characteristics, the best candidate will be chosen for incorporation in a prototype product for a Phase II effort
