We propose to develop a new class of semiconductor devices and nano-electro-mechanical systems (NEMS). These new systems are based on the formation of multiple quantum wells (MQW) and multiple quantum barriers (MQB) for electron confinement. Our efforts will significantly impact the important new area of nano technology/electronics. Our unique approach will allow us to study phenomena and interactions at room temperature that currently can only be measured at cryogenic temperatures. We will produce multiple quantum barriers (for example SiO2 and SiNx) on Si microstructures to form a composite quantum barrier. These composite energy barriers, formed by coupling semiconductors through multiple thin oxide layers, allow us to actively manipulate the height of the resulting effective energy barrier. In fact, the effective energy barrier can be modulated (raised as well as lowered) by applying an external electric field or a mechanical stress. Finally, we will use quantum point contacts to form a novel nanomechanical electron transistor in which electron transport can be actuated by simply bending the microstructure. GHz frequencies are possible in such devices under the right circumstances. Feasibility versions of both a nano-mechanical transistor and a tunable IR detector will be attempted.Applications of nanomechanical electronics are numerous, particularly when coupled with the ability to vary the electron energy within a nano/micro device. Devices such as uncooled photon detectors and single electron transistors that utilize photo-induced electronic stress in quantum wells and quantum barriers are also examples of the possible device architectures. This type of technology holds promise for both DOD and commercial applications once the feasibility can be demonstrated.
Keywords: NANO ELECTRONICS, NEMS, NANO TRANSISTERS, BANDGAP ENGINEERING, QUANTUM WELLS
