PN-junction AlGaN photodetectors with a cut-off wavelength shorter than 300 nm (solar blind) have been recently demonstrated. This type of device, which holds a potential to deliver performance not matched by any other types of photodetectors, are required for several defense and civilian applications. However, the efficiency of these devices is limited by the high resistivity of p-AlGaN. Boston Nitride Technologies proposes a novel fabrication approach for demonstration of high-performance p-n heterojunction AlGaN-based solar blind photodetectors. In this program a novel solution for p-type doping in high Al-content AlGaN alloys will be explored. Significant enhancement of p-type doping in AlGaN with Al mole fractions exceeding 35 % will be achieved by employing short period p-doped AlGaN/GaN superlattices. In addition, we will implement a novel device design using a recessed window structure developed at the University of Texas at Austin. As a result of the Phase I effort, we expect to demonstrate enhanced efficiency in AlGaN-based solar blind photodetectors. This type of device can be used for monitoring hazardous chemical species, detecting flame, tracking and guiding missiles
Keywords: Gallium Aluminum Nitride, UV, Photodetector
