In comparison with the GMR metal multilayers, a new device called magnetic tunneling junction (MTj) has the advantages in the vertical current flow geometry and the control of the total resistance of the junction over a wide range (a few ? to H?) while keeping the large MR ratio intact. Therefore, adaptation of MTJ for RAM memory cells has the potential to satisfy important criteria of density, process simplicity and silicon compatibility, power consumption, and adequate logic signal level for performance and noise immunity. A novel cross-point MRAM architecture in the design has successfully utilized the advantages of vertical current flow and scalable resistance for a MTJ device. Spinix Corporation proposes to further advance this technology by collaborating with Dr. Robert O'Handley at M.I.T. in demonstrating the feasibility of integration of radiation hard nonvolatile MTJ memory array into a silicon COMS circuit in this phase I program.
Keywords: Magnetoresistance; Magnetic Tunneling Junction; Radiation Hard Mram;Silicon Integration Technology;
