
Metal-Ferroelectric-Insulator Field Effect Transistor (MFISFET) for Radiation Hardened, Non-Destructive-Read-Out (NDRO) Nonvolatile MemoryAward last edited on: 4/15/02
Sponsored Program
SBIRAwarding Agency
DOD : MDATotal Award Amount
$65,000Award Phase
1Solicitation Topic Code
BMDO99-014Principal Investigator
Lee KammerdinerCompany Information
Phase I
Contract Number: DTRA01-99-P-0058Start Date: 8/2/99 Completed: 2/1/00
Phase I year
1999Phase I Amount
$65,000Potential Commercial Applications:
Ferroelectric gate FETs (MFISFET) have higher writing speed and unlimited number of read write cycles (greater than 1012) when compared to conventional floating gate electrically erasable programmable read only memories (EEPROMS), they will become the ultimate non-volatile memory technology for 21st century. This technology has multi-billion dollar potential. Because of their radiation hardness, they have extensive use in
Phase II
Contract Number: ----------Start Date: 00/00/00 Completed: 00/00/00