The SIA National Technology Roadmap for Semiconductors (NTRS) has defined a need for ultra-thin (<80angstrom) barrier materials, to enable full implementation of Cu interconnects. The NTRS says: "There is no known solution to meet these requirements." The objectives of the program provide an innovative but viable pathway to demonstrate ultra-thin metal barrier films using materials that are included in the industry's roadmap for implementation of Cu interconnects. The Phase 1 program will demonstrate the feasibility of a deposition process for ultra-thin metal barriers through the development of a process and tool capable of controlling atomic level reactions. The basic method employs advanced chemistry, and the applied surface science deals with the understanding and definition of layer growth initiation. The approach emphasizes attention to meeting the critical goals of uniformity control at the levels of atomic dimensions, film conformality in high aspect ratio structures, application to large wafers, and low deposition temperatures. The technology should serve the needs of the semiconductor industry through 2015. Genus, Inc. has developed capabilities and a partnering infrastructure to demonstrate proof of concept.
Keywords:Ultra-Thin Metal Barriersadvanced Interconnectsapplied Surface Sciencecu Metal Barriers
