SBIR-STTR Award

Single Event Latchup Suppression in Radiation Tolerant Ics
Award last edited on: 4/15/02

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$69,576
Award Phase
1
Solicitation Topic Code
BMDO98-008
Principal Investigator
W James P Spratt

Company Information

Full Circle Research Inc (AKA: FCR)

4124 West Deerpath Drive
Boise, ID 83714
   (208) 629-5363
   jim.spratt@hotmail.com
   www.fullcircleresearch.com
Location: Multiple
Congr. District: 02
County: Ada

Phase I

Contract Number: DSWA01-98-M-0293
Start Date: 6/10/98    Completed: 1/29/99
Phase I year
1998
Phase I Amount
$69,576
CR proposes a prog am of research to develop a new technique for suppressing single event latchup (SEL) in ICs that would be adequately radiation tolerant, except for their susceptibility to single event induced latchup. SEL suppression has, up till now, required the use of wafer preparation technologies such as SOI, SOS, etc., which are not used by mainstream IC manufacturers. The technique proposed herein would greatly enhance the ability to upgrade COTS ICs to rad-tolerant (Rt) chips through non-intrusive modifcations to commercial fabrication processess. Using this technique, space systems manufacturers could procure a much wider range of part types from a wider range of suppliers, and by conducting some additional post-manufacturing operations, make them immune to SEL.

Keywords:
Single Event Latchup (Sel) Technique For Rad-Tolerant Ics Sel Suppression In Ics Non-Intrusive Hard

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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