AlGaAs laser diode arrays used at 785-808 nm to pump YAG-type solid state lasers need improvement in reliability and power efficiency. Diode lasers with InGaAs quantum wells, used for longer wavelength pumping, have demonstrated improved life and efficiency. This program will study the quaternary material system, AlxGayInAs, to determining growth conditions which can result in highly reliable diode lasers emitting light at ^<850 nm. The program will use MBE grown multiple quantum well structures and photoluminescence diagnostics to efficiently explore a wide range of compositions, growth temperatures and fluxes. These data will be used to design and build laser diodes to demonstrate lifetimes and power efficiencies.
