A process for tine manufacture of high purity silicon carbide platelets (small wafers) previously has been demonstrated that has the capability to produce platelets with average diameters greater than one centimeter. The platelets produced by this process have shown the potential for high electron mobility, chemical and physical stability under radiation levels projected to be in excess of ten years in a deep space environment and electrical resistivity values in excess of 50 Ohms-cm. Critical limits for the process parameters are being defined and established that control the size of the platelets. Baseline chemical and physical, properties are being established using such analytical techniques as hall measurements, sheet resistance, and scanning electron microscopy. By application of established design of experience techniques, the test specimens are being subjected to a series of design experiments involving the application of heat in combination with various atmospheres to optimize the potential electronic properties of the platelets. A manufacturing process which would consistently yield inexpensive, high volume, high purity, high quality silicon carbide platelets suitable for use in electronic applications including semiconductor applications.
