SBIR-STTR Award

Design of an Ultrasensitive Active Pixel Sensor Taking into Account Charging Effects in a Nanoscale Transistor
Award last edited on: 9/1/2006

Sponsored Program
SBIR
Awarding Agency
DOE
Total Award Amount
$99,960
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Wayne H Richardson

Company Information

Qusemde (AKA: Meso D Corporation)

592 East Weddell Drive Suite 10
Sunnyvale, CA 94089
   (408) 744-1214
   info@qusemde.com
   www.qusemde.com
Location: Single
Congr. District: 17
County: Santa Clara

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2006
Phase I Amount
$99,960
Active pixel sensors (APS), essential components in commercial digital cameras and medical instruments, are currently under consideration as direct-conversion particle detectors for nuclear physics research. Across many fields, there is increasing demand for more sensitive detectors. This project will utilize the novel features of charging effects in nanoscale silicon transistors to obtain dramatic improvement in the sensitivity of APS. In Phase I, the differences between the standard APS (where charge transport is based on the usual principles of drift and diffusion) and the new device (in which tunneling and charging effects of ultrasmall capacitances play an important role) will be clarified. The design of the device, as well as the steps in the fabrication process, will be specified. Noise characteristics and sensitivity for various designs also will be specified. In Phase II, the device will be fabricated and tested.

Commercial Applications and Other Benefits as described by the awardee:
High sensitivity APS should find use in a variety of commercial imaging instruments, from cameras for high definition images to robotic manufacturing systems. In nuclear physics research, the device would be useful for charged-particle tracking

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
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Phase II Amount
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