Currently available neutron detectors limit the full utilization of beam power and resolution capabilities at existing and proposed steady state and pulsed neutron scattering facilities, used for materials science research. Substantial improvements in detector performance are needed to solve this problem. This project will apply recently developed boron-carbide semiconductor technology to produce solid-state, modular, pixel-cell detector systems with substantially improved count rate and spatial resolution capabilities, compared to 3He based neutron detector systems. In Phase I, the characteristics of boron-carbide diodes will be investigated, and their potential as advanced neutron detectors will be determined. A set of application specific diodes will be procured and tested.
Commercial Applications and Other Benefits as described by the awardee: Improved neutron detector systems should find applications at existing and planned neutron-scattering facilities in the United States and worldwide. Other fields of neutron imaging (e.g., homeland security and radiography) also should benefit
