A semiconductor metrology tool will be developed employing the technique of small-angle x-ray scattering (SAXS) to measure the critical dimension (CD) of patterned device structures. The feasibility of the SAXS technique to measure CD has been shown using high-power synchrotron radiation facilities which are not of practical use to the semiconductor industry. The ultimate project goal is to produce a practical CD-SAXS tool for use within semiconductor fabs. COMMERCIAL APPLICATIONS: Currently, CD-SAXS measurements can be performed at synchrotron radiation facilities available at various National Laboratories around the country and government-sponsored facilities around the world. These facilities, while accessible to industry, cannot be considered practical outlets for routine semiconductor production CD-SAXS measurements. A goal of this project would be to produce a commercial CD-SAXS tool for use within semiconductor fabrication facilities. While there exist numerous analytical techniques which offer useful information for semiconductor production, only those which can be integrated into the production facility are able to meet the requirements of production throughput. The resulting commercial product would complement Jordan Valley's existing product line of x-ray metrology tools and would be offered to industry through the company's existing worldwide sales channels
