SBIR-STTR Award

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High Voltage and Speed SiC MOSFETs through Improved Gate Dielectric Interfaces
Award last edited on: 5/30/2023

Sponsored Program
SBIR
Awarding Agency
DOD : DMEA
Total Award Amount
$1,099,639
Award Phase
2
Solicitation Topic Code
DMEA221-D01
Principal Investigator
Justin Hill

Company Information

Mainstream Engineering Corporation

200 Yellow Place
Rockledge, FL 32955
   (321) 631-3550
   info@mainstream-engr.com
   www.mainstream-engr.com
Location: Single
Congr. District: 08
County: Brevard

Phase I

Contract Number: N/A
Start Date: 8/2/2022    Completed: 7/31/2024
Phase I year
2022
Phase I Amount
$1
Direct to Phase II

Phase II

Contract Number: HQ072722C0007
Start Date: 8/2/2022    Completed: 7/31/2024
Phase II year
2022
Phase II Amount
$1,099,638
Development of high voltage gated semiconductor device process that leverages the enhanced power handling capability of SiC, and remediates the undesirable effects (threshold voltage instability, increased interface capacitance) associated with native SiO2 growth from commercially available 4H-SiC and 6H-SiC polytypes. The process improvement and resultant performance enhancements gained will be validated by characterization of prototype devices