SBIR-STTR Award

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Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates
Award last edited on: 4/4/2014

Sponsored Program
SBIR
Awarding Agency
DOD : DMEA
Total Award Amount
$846,631
Award Phase
2
Solicitation Topic Code
DMEA-092-002
Principal Investigator
Christopher Saint

Company Information

Tahoe RF Semiconductor Inc

12834 Earhart Avenue
Auburn, CA 95602
   (530) 823-9786
   N/A
   www.tahoerf.com
Location: Single
Congr. District: 01
County: Placer

Phase I

Contract Number: H94003-10-P-1003
Start Date: 12/4/2009    Completed: 4/30/2010
Phase I year
2010
Phase I Amount
$98,268
This proposal explores the feasibility of a communication system based on the modulation of a magnetic field. The principle of mutual induction states that the voltage induced by mutual induction in one inductor is always proportional to the rate of current change in the other inductor. If one inductor is in the transmitter, and the other inductor is in the receiver, the induced voltage in the receiving inductor shall follow the modulation of the current in the transmitting inductor.

Keywords:
Magnetics, Communications, Data Transmission, Lpi, Lpd, Microelectronics, Mutual Inductance, Inductor

Phase II

Contract Number: H94003-11-C-1105
Start Date: 2/1/2011    Completed: 1/31/2012
Phase II year
2011
Phase II Amount
$748,363
Tahoe RF will design, simulate, fabricate and test a low noise amplifier (LNA) and companion power amplifier (PA). The feasibility study for this design was completed during the Phase I activities. The design will be fabricated using a noise improved device models of a 0.25 µm silicon-on-sapphire (SOS) process.

Keywords:
Lnas, Pas, Radiation Hard Front-End-Modules, Wi-Fi Networks, Satcom, Monolithic Integrated Circuits, Satellite Electronics