SBIR-STTR Award

We propose to take the first steps in demonstrating a new class of high frequency FETs by demonstrating a gate oxide for GaAs and InP MOSFETs. In this work, Gallium based oxides will be grown by MBE using a specially developed effusion cell that is uniquely capable of high temperature operation in the presence of oxygen. In addition, a new type of atomic oxygen source will be employed that does not damage the semiconductor-Oxide interface. We will use this new MBE technology to (1) optimize the nucleation of oxide on GaAs and InP, (2) grow bulk oxide films with a bandgap in excess of 4.5eV, (3) and produce oxide films that possess good interface properties and a low residual conductivity. The materials will be characterized using techniques including ellipsometry, Photoluminscence, C-V, and I-V measurements as a function of temperature. In addition, a new type of MBE system that is uniquely suited to the high quality growth of gate oxides on III-V semiconductors will also be designed during this Phase I effort.

Keywords:
Gate Oxide; MBE; FET; MOSFET; CHFET; GAAS; INP; MM-WAVE

We propose to continue our extensive research and development effort regarding the demonstration of a high performance GaAs MOSFETs for very high speed low power VLSI applications. We intend to achieve this goal through a program that integrates advances in MBE materials growth and MOS Device Technology for Compound Semiconductors. Through the course of this work, we expect to change the face of the IC technology by providing the foundation for the first manufacturable MOSFET IC technology for compound semiconductors