The objectives of this work are to enhance Gateway Modeling process and device modeling programs for the design of mm-wave HEMTs, advance Cascade Microtech on-wafer measurement techniques for device characterization at high frequency and develop models of mm-wave HEMTs for use in computer-aided design of microwave integrated circuits. Bias and temperature- dependent S-parameters will be measured for 0.1 micron gate- length InP or GaAs HEMTs on-wafer from 1 to 110GHz and small- and large-signal model parameters for use in computer-aided design programs will be derived. The results will be compared with process and device modeling programs and several problems in mm-wave HEMT process design will be investigated. Anticipated
Benefits: The beneficiaries in this effort are the device foundries who are the main users of computer-aided design models for mm- wave design, of the Cascade Microtech on-wafer W-band probes, and of Gateway's process and device modeling programs. The US government is the indirect beneficiary as consumers of mm-wave MMICS.
