The objective is to develop a multiple wavelength laser diode based on quantum well technology. The device is based on gallium indium arsenic phosphide on an indium phosphide substrate. The material composition is to be determined according to the formula of 1-x and 1-y for all values of x and y less than 1.0. The objective is to identify materials which will produce specific output wavelengths between 1.1 and 1.6 microns. A device geometry will be developed using multiple quantum wells which will provide a specific output wavelength corresponding to a specific electrical signal input. In phase I the materials will be specified, the device geometry and architecture developed, and a manufacturing technology/methodology established. Anticipated benefits/potential commercial applications - the benefit is significantly increased data rates and increased capacity of each optical fiber pair. The commercial applications are in high speed telecommunications and data communications applications.
Keywords: Laser Diode, Optical Communications, Quantum Wells
