There is a developing need for a low-cost high performance eSWIR infrared detector technology that can operate at room temperature with a cutoff wavelength of 2.5 microns. Over the years, many new and innovative technologies have emerged that have made some progress towards this goal, but the gap between the quantum efficiency and cutoff wavelength with room temperature have been difficult to bridge. We propose to model and determine the best parameters to grow state-of-the-art eSWIR material via MOCVD on both lattice matched and lattice mismatched reduced strain substrates. We will also tune and grow barrier structures to reduce dark current â while, in parallel developing innovative structures for amplifying the light received by the absorber â resulting in a significant improvement to eSWIR quantum efficien
