SBIR-STTR Award

The feasibility of an in-situ, real-time, non-contact system for optically monitoring temperature in the range 25-800C on Si, GaAs, and CdTe-buffered Si/GaAs substrates will be demonstrated. Real-time measurement of thin-film stress and surface reflectivity during deposition on these substrates, including samples provided by NVESD, will also be developed. Temperature measurement will be performed via band-edge thermometry and blackbody radiation analysis, while stress and reflectivity measurement will be made using an etalon-based multiple laser array approach. Data acquisition will be home-pulse triggered, with provisions made for the non-integer shaft-to-stage rotation ratio of V80H MBE reactors.

Keywords:
Molecular-Beam Epitaxy (Mbe), Band-Edge Thermometry, Thin-Film Stress, Large-Area Substrates, Real-Time Monitoring, Hgcdte, Surface Reflectivity, In-Situ

An integrated, in-situ, real-time, optical metrology system will be developed to measure temperature, film stress and reflectivity during CdTe and HgCdTe-based deposition applications. Temperature measurement will be performed using band-edge thermometry and blackbody radiation analysis to provide a measurement range of 25-800 degrees C on Si, GaAs, and CdTe-buffered Si/GaAs substrates. The system will be capable of full 2D substrate temperature profiling to provide uniformity analysis. Stress and reflectivity measurement will be made using an etalon-based multiple laser beam array. All measurements will be made simultaneously and will be synchronized to the substrate rotation. The system will be designed with the flexibility to be mounted on multiple reactor geometries.

Keywords:
Band-Edge Thermometry, Thin-Film Stress, Reflectivity, Molecular-Beam Epitaxy, Hgcdte, In-Situ Metrology, Real-Time Monitoring, Large Area Substrates