SBIR-STTR Award

The objective of this Phase I research is to analyze and find solutions to design a dual-band power MMIC with 30W output power at Ku and Ka-Band as described in the Army SBIR solicitation. Millimeter-wave high-power broadband MMIC amplifiers have numerous applications in EW and in military and commercial communications. AMCOM proposes to adapt its unique HIFET technology to mm-Wave GaN devices and to design an MMIC meeting the program goals. The technical challenge in developing high power amplifiers is matching the low optimal output impedance to 50 Ohms. Furthermore, the dual-band requirement further complicates such a task. The HIFET technology offers great potential in designing microwave and mm-wave broadband devices with optimum load impedance close to 50 Ohms thus eliminating the obstacles in developing broadband power MMICs. Currently, there is no existing MMIC PA that can meet the Army requirements. The development of such an amplifier will greatly reduce the size, weight, system DC power requirement, and would provide a large business potential.

Keywords:
Broadband Amplifier, Gan, Hemt, Hifet, High Impedance, High Power Amplifier, High Voltage, Millimeter Wave Power, Mmic, Phemt

The objective of this Phase 2 Program is to build on the Phase 1 results: 1). Continue refine the millimeter wave HIFET model. 2). Fabricate and test GaN HEMT millimeter wave HIFET to prove the validity of the millimeter wave HIFET model. 3). Develop State-of-the-art millimeter wave MMIC PA module having 25W output power, 50dB gain with 25% efficiency; and other MMIC PA’s. 4). Investigate linearization technique.

Keywords:
Millimeter Wave High Power Amplifier, Ka-Q Band Dual Band Pa, Gan Broadband Pa, Millimeter Hifet, Wimax Pa