The objective of the proposed project is to develop innovative new analytical instrumentation and methodology capable of performing automated, non-destructive analysis of semiconductor sensor elements and arrays located on three inch diameter wafers. The instrumentation would be capable of analyzing II-VI compounds and alloys, particularly HgCdTe. The methodology would employ state-of-the-art electron optics and signal processing electronics to maximize instrument resolution and throughput while minimizing damage due to the incident electron beam. The proposed project has been divided into two Phases. During Phase Y (in progress) , an overall system configuration was developed and components to be integrated were selected, most of which are commercially available. Two custom vacuum chambers were designed, a transfer chamber and an analytical chamber. A transfer chamber is required to provide vibration isolation and to interface the end-user BE system currently in use with the analytical chamber1 as some physical manipulations (mechanical-manually operated) will be necessary to position the sample wafer in the focal point of the analytical chamber. The configuration of the analytical chamber is based primarily on a commercially available chamber, with the minimum modifications necessary for integration. Both chambers are currently being constructed as part of the Phase I effort. During Phase II,, the remaining Components (primarily analytical) will be acquired and installed, yielding an instrument which is fully integrated, and capable of performing extensive analyses with a minimum of manual operations. BENEFITS
Keywords: Auger Electron X-Ray Photoelectron Imaging Surface Analysis Vacuum Electron Beam
