A new photodetector for 10 um wavelengths is proposed which consists of gaas/algaas quantum wells incorporated into a pnp algaas phototransistor. By appropriate engineering of the epitaxial structure, optical gains of ~100 should be feasible in the proposed detector. the device should exhibit responsivities and specific detectivities (d") which are superior to those of hgcdte photovoltaic detectors. This phase i project will include device modelling and design, growth by molecular beam epitaxy and fabrication of working devices, and device characterization at 10 um wavelengths
